Amorphous Phase in Palladium—Silicon Alloys
نویسندگان
چکیده
منابع مشابه
Phase separation in sputtered amorphous metal-germanium alloys.
Anomalous small-angle x-ray scattering (ASAXS) has been used to observe and characterize phase separation in sputtered amorphous FecGel -c and MocGe 1-c thin films. Significant chemical inhomogeneity and anisotropy is observed. At low metal concentrations (c<O.25), no . .. .. -films are homogeneous nor isotropic through the metal-insulator transition composition region (10<cs25). Measurements p...
متن کاملPhase transformations of amorphous semiconductor alloys under high pressures
The paper reviews the results of experimental studies and thermodynamical modelling of metastable T –P diagrams of initially amorphous GaSb–Ge and Zn–Sb alloys which provide a new insight into the problem of pressure-induced amorphization.
متن کاملDeposition of amorphous silicon alloys
Hydrogenated amorphous silicon alloys of carbon and germanium can be deposited by glow-discharge decomposition of gaseous hydrides or fluorides. Non-plasma methods such as photochemical vapour deposition are also used and offer guidelines for understanding and improving the standard glow-discharge method. These amorphous alloys usually have poorer structural and electronic properties than pure ...
متن کاملHydrogen diffusion in Zr-Pd amorphous alloys
Nuclear Magnetic Relaxation measurements of the dipolar relaxation rate due to hydrogen diffusion in Zr-Pd amorphous alloy~ have been conducted and the results interpreted in terms of the random alloy model. It is found that even though the measured activation
متن کاملStructural transformations in amorphous $ crystalline phase change of Ga-Sb alloys
of Ga-Sb alloys T. G. Edwards, I. Hung, Z. Gan, B. Kalkan, S. Raoux, and S. Sen Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616, USA Center of Interdisciplinary Magnetic Resonance, National High Magnetic Field Laboratory, 1800 East Paul Dirac Drive, Tallahassee, Florida 32310, USA Advanced Light Source, Lawrence Berkeley Laboratory, Be...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1965
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1714461